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Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10. Up to 3 × 10. The grafting of nitrophenyl molecules occurs preferentially at basal planes. Ceramic sub...

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China

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ho●●●●●●●●●●@163.com

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Victor chan

Victor chan

7E1,No.99,●●●●●●●●●●ding, huli

xi●●en , Fujian, 361000

China

86.5●●●●5254
86.5●●●●5822
ho●●●●●●●●●●@163.com

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Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10. Up to 3 × 10. The grafting of nitrophenyl molecules occurs preferentially at basal planes. Ceramic sub...
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6 graphical abstract
7 keywords
8 epitaxial graphene
9 electrochemical modification
10 functionalization
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Sicsubstrate | sicsubstrate.com Reviews

https://sicsubstrate.com

Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10. Up to 3 × 10. The grafting of nitrophenyl molecules occurs preferentially at basal planes. Ceramic sub...

INTERNAL PAGES

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1

SiC substrate: Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts

http://www.sicsubstrate.com/2015/07/atom-scale-covalent-electrochemical.html

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10.

2

SiC substrate

http://www.sicsubstrate.com/index.html

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Structural and defects induced phenomena in γ-rays irradiated 6H-SiC. 8226;No formation of others SiC polytypes. 8226;The gamma rays irradiation has induced a slight surface amorphization. 8226;A re-crystallization at lower and higher doses is noticed. C and Si. The thermograv...

3

SiC substrate: 七月 2015

http://www.sicsubstrate.com/2015_07_01_archive.html

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10.

4

SiC substrate: Products

http://www.sicsubstrate.com/p/products_11.html

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. SICSUBSTRATE provide epi ready 4H and 6H polytype with n type and semi-insulating ones. Application of SiC substrate:. SiC-based microwave devices and circuits. SiC MESFET ;SiC MMIC;AlGaN/GaN HEMT;AlGaN/GaN MMIC. 1)2” SiC 4H N type 4deg.off. 2",3",4"dia 4H-N. 2)2", 3",4" 6H SiC.

5

SiC substrate: 二月 2015

http://www.sicsubstrate.com/2015_02_01_archive.html

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. Ceramic substrates of β-SiC/SiAlON composite from preceramic polymers and Al–Si fillers. SiAlON polytypoids were observed in all the samples and were identified by high resolution electron microscopy (HREM) in samples pyrolyzed at 1500 °C. 标签: sic substrate. 订阅: 帖子 (Atom).

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Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. Atom-scale covalent electrochemical modification of single-layer graphene on SiC substrates by diaryliodonium salts. Controlled modification of epitaxial graphene is achieved by using diaryliodonium salts. The grafting density can be reproducibly tuned from 4 × 10. Up to 3 × 10. The grafting of nitrophenyl molecules occurs preferentially at basal planes. Ceramic sub...

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